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SPP15N60CFD coolmos tm power transistor features ? intrinsic fast-recovery body diode ? extremely low reverse recovery charge ? ultra low gate charge ? extreme d v /d t rated ? high peak current capability ? qualified for industrial grade applications according to jedec 1) coolmos cfd designed for: ? softswitching pwm stages ? lcd & crt tv maximum ratings, at t j =25 c, unless otherwise specified parameter symbol conditions unit continuous drain current i d t c =25 c a t c =100 c pulsed drain current 2) i d,pulse t c =25 c avalanche energy, single pulse e as i d =6.7 a, v dd =50 v 460 mj avalanche energy, repetitive 2),3) e ar i d =13.4 a, v dd =50 v avalanche current, repetitive 2),3) i ar a drain source voltage slope d v /d t i d =13.4 a, v ds =480 v, t j =125 c v/ns reverse diode d v /d t d v /d t v/ns maximum diode commutation speed d i /d t a/s gate source voltage v gs static v ac ( f >1 hz) power dissipation p tot t c =25 c w operating and storage temperature t j , t stg c mounting torque m3 & 3.5 screws 60 ncm 0.8 40 value 13.4 8.4 33 20 30 156 -55 ... 150 600 13.4 80 i s =13.4 a, v ds =480 v, t j =125 c v ds @ tjmax 650 v r ds(on),max 0.330 " i d 13.4 a product summary type package marking SPP15N60CFD pg-to220 15n60cfd pg-to220 rev. 1.3 page 1 2009-11-30
SPP15N60CFD parameter symbol conditions unit min. typ. max. thermal characteristics thermal resistance, junction - case r thjc - - 0.8 k/w r thja leaded - - 62 soldering temperature, wave soldering only allowed at leads t sold 1.6 mm (0.063 in.) from case for 10 s - - 260 c electrical characteristics, at t j =25 c, unless otherwise specified static characteristics drain-source breakdown voltage v (br)dss v gs =0 v, i d =250 a 600 - - v avalanche breakdown voltage v (br)ds v gs =0 v, i d =13.4 a - 700 - gate threshold voltage v gs(th) v ds = v gs , i d =750 a 3 4 5 zero gate voltage drain current i dss v ds =600 v, v gs =0 v, t j =25 c - 1.4 - a v ds =600 v, v gs =0 v, t j =150 c - 1200 - gate-source leakage current i gss v gs =20 v, v ds =0 v - - 100 na drain-source on-state resistance r ds(on) v gs =10 v, i d =9.4 a, t j =25 c - 0.28 0.33 " v gs =10 v, i d =9.4 a, t j =150 c - 0.78 - gate resistance r g f =1 mhz, open drain - 1.3 - transconductance g fs | v ds |>2| i d | r ds(on)max , i d =9.4 a - 8 - s values thermal resistance, junction - ambient rev. 1.3 page 2 2009-11-30
SPP15N60CFD parameter symbol conditions unit min. typ. max. dynamic characteristics input capacitance c iss - 1820 - pf output capacitance c oss - 520 - reverse transfer capacitance c rss - 21 - effective output capacitance, energy related 4) c o(er) - 61 - effective output capacitance, time related 5) c o(tr) - 110 - turn-on delay time t d(on) - 43 - ns rise time t r - 24 - turn-off delay time t d(off) - 47 - fall time t f - 5 - gate charge characteristics gate to source charge q gs - 11 - nc gate to drain charge q gd - 38 - gate charge total q g - 63 84 gate plateau voltage v plateau - 7.3 - v 2) pulse width t p limited by t j,max 3) repetitive avalanche causes additional power losses that can be calculated as p av = e ar * f. 4) c o(er) is a fixed capacitance that gives the same stored energy as c oss while v ds is rising from 0 to 80% v dss. 5) c o(tr) is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss. 1) j-std20 and jesd22 values v gs =0 v, v ds =25 v, f =1 mhz v dd =400 v, v gs =10 v, i d =13.4 a, r g =3.6 " v dd =480 v, i d =13.4 a, v gs =0 to 10 v v gs =0 v, v ds =0 v to 480 v rev. 1.3 page 3 2009-11-30
SPP15N60CFD parameter symbol conditions unit min. typ. max. reverse diode diode continuous forward current i s - - 13.4 a diode pulse current 2) i s,pulse - - 33 diode forward voltage v sd v gs =0 v, i f = i s , t j =25 c - 1.0 1.2 v reverse recovery time t rr - 147 - ns reverse recovery charge q rr - 1 - c peak reverse recovery current i rrm - 12 - a peak rate of fall of reverse recovery current d i rr / d t t j =25 c - 1200 - a/s v r =480 v, i f = i s , d i f /d t =100 a/s t c =25 c values rev. 1.3 page 4 2009-11-30
SPP15N60CFD 1 power dissipation 2 safe operating area p tot =f( t c ) i d =f( v ds ); t c =25 c; d =0 parameter: t p 3 max. transient thermal impedance 4 typ. output characteristics i d =f( v ds ); t j =25 c i d =f( v ds ); t j =25 c parameter: d=t p / t parameter: v gs 0 20 40 60 80 100 120 140 160 0 40 80 120 160 t c [c] p t o t [ w ] 1 s 10 s 100 s 1 ms 10 ms dc 10 3 10 2 10 1 10 0 10 2 10 1 10 0 10 -1 v ds [v] i d [ a ] single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10 -1 10 -2 10 -3 10 -4 10 -5 10 0 10 -1 10 -2 t p [s] z t h j c [ k / w ] 5 v 5.5 v 6 v 6.5 v 7 v 8 v 10 v 20 v 0 5 10 15 20 25 30 35 0 5 10 15 20 v ds [v] i d [ a ] limited by on-state resistance rev. 1.3 page 5 2009-11-30
SPP15N60CFD 5 typ. output characteristics 6 typ. drain-source on-state resistance i d =f( v ds ); t j =150 c r ds(on) =f( i d ); t j =150 c parameter: v gs parameter: v gs 7 drain-source on-state resistance 8 typ. transfer characteristics r ds(on) =f( t j ); i d =9.4 a; v gs =10 v i d =f( v gs ); | v ds |>2| i d | r ds(on)max parameter: t j typ 98 % 0 0.2 0.4 0.6 0.8 1 -60 -20 20 60 100 140 180 t j [c] r d s ( o n ) [ ] 25 c 150 c 0 10 20 30 40 50 0 2 4 6 8 10 12 v gs [v] i d [ a ] 5 v 5.5 v 6 v 6.5 v 7 v 8 v 10 v 20 v 0 5 10 15 20 0 5 10 15 20 v ds [v] i d [ a ] 5 v 5.5 v 6 v 6.5 v 7 v 10 v 20 v 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 0 2 4 6 8 10 12 i d [a] r d s ( o n ) [ ] rev. 1.3 page 6 2009-11-30
SPP15N60CFD 9 typ. gate charge 10 forward characteristics of reverse diode v gs =f( q gate ); i d =13.4 a pulsed i f =f( v sd ) parameter: v dd parameter: t j 11 avalanche soa 12 avalanche energy i ar =f( t ar ) e as =f( t j ); i d =6.7 a; v dd =50 v parameter: t j(start) 0 60 120 180 240 300 360 420 480 25 75 125 175 t j [c] e a s [ m j ] 25 c 150 c 25 c, 98% 150 c, 98% 10 2 10 1 10 0 10 -1 0 0.5 1 1.5 2 v sd [v] i f [ a ] 125 c 25 c 10 4 10 3 10 2 10 1 10 0 10 -1 10 -2 10 -3 0 2 4 6 8 10 12 14 t ar [s] i a v [ a ] 120 v 480 v 0 2 4 6 8 10 0 20 40 60 80 q gate [nc] v g s [ v ] rev. 1.3 page 7 2009-11-30
SPP15N60CFD 13 drain-source breakdown voltage 14 typ. capacitances v br(dss) =f( t j ) c =f( v ds ); v gs =0 v; f =1 mhz 15 typ. c oss stored energy 16 typ. reverse recovery charge e oss = f (v ds ) q rr =f( t j );parameter: i d =13.4 a 540 580 620 660 700 -60 -20 20 60 100 140 180 t j [c] v b r ( d s s ) [ v ] ciss coss crss 10 4 10 3 10 2 10 1 10 0 0 100 200 300 400 500 v ds [v] c [ p f ] 0 2 4 6 8 10 12 0 100 200 300 400 500 600 v ds [v] e o s s [ j ] 1 1.2 1.4 1.6 1.8 2 25 50 75 100 125 t j [c] q r r [ c ] rev. 1.3 page 8 2009-11-30
SPP15N60CFD 17 typ. reverse recovery charge 18 typ. reverse recovery charge q rr =f( i s ); parameter: d i/ d t =100 a/s q rr =f(d i /d t ); parameter: i d =13.4 a 25 c 125 c 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 3 5 7 9 11 13 i s [a] q r r [ c ] 25 c 125 c 0 0.5 1 1.5 2 2.5 3 100 200 300 400 500 d i/ d t [a/s] q r r [ c ] rev. 1.3 page 9 2009-11-30
SPP15N60CFD definition of diode switching characteristics rev. 1.3 page 10 2009-11-30
SPP15N60CFD pg-to-220-3--1; -3-21 dimensions in mm/ inches rev. 1.3 page 11 2009-11-30
SPP15N60CFD published by infineon technologies ag 81726 munich, germany ? 2008 infineon technologies ag all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, including without limitation, warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office (www.infineon.com). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. infineon technologies components may be used in life-support devices or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered. rev. 1.3 page 12 2009-11-30

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